Raman study on residual strains in thin 3C-SiC epitaxial layers grown on Si(001)

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	Raman study on residual strains in thin 3C-SiC epitaxial layers grown on Si(001)
	Zhu JJ ; Liu SY ; Liang JW
刊名	thin solid films
	2000
卷号	368 期号:2 页码:307-311
关键词	Raman spectrum thin film chemical vapor deposition SCATTERING SI
ISSN号	0040-6090
通讯作者	zhu jj,chinese acad sci,inst semicond,beijing 100083,peoples r china.
中文摘要	raman scattering measurement has been used to study the residual strains in the thin 3c-sic/si(001) epilayers with a variation of film thickness from 0.1 to 1.2 mu m. which were prepared by chemical vapor deposition (cvd)growth. two methods have been exploited to figure our the residual strains and the exact lo bands. the final analyzing results show that residual strains exist in the 3c-sic epilayers. the average stress is 1.3010 gpa, and the relative change of the lattice constant is 1.36 parts per thousand. our measurements also show that 3c-sic phonons are detectable even for the samples with film thickness in the range of 0.1 to 0.2 mu m. (c) 2000 published by elsevier science s.a. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12554]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhu JJ,Liu SY,Liang JW. Raman study on residual strains in thin 3C-SiC epitaxial layers grown on Si(001)[J]. thin solid films,2000,368(2):307-311.
APA	Zhu JJ,Liu SY,&Liang JW.(2000).Raman study on residual strains in thin 3C-SiC epitaxial layers grown on Si(001).thin solid films,368(2),307-311.
MLA	Zhu JJ,et al."Raman study on residual strains in thin 3C-SiC epitaxial layers grown on Si(001)".thin solid films 368.2(2000):307-311.