Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy

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	Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy
	Pan Z ; Li LH ; Zhang W ; Lin YW ; Wu RH
刊名	applied physics letters
	2000
卷号	77 期号:2 页码:214-216
关键词	TEMPERATURE PULSED OPERATION CHEMICAL-VAPOR-DEPOSITION QUANTUM-WELLS LASER-DIODE TERTIARYBUTYLARSINE GAAS
ISSN号	0003-6951
通讯作者	pan z,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china.
中文摘要	we have studied the growth of gainnas by a plasma-assisted molecular-beam epitaxy (mbe). it was found that the n-radicals were incorporated into the epitaxial layer like dopant atoms. in the range of 400-500 degrees c, the growth temperature (t-g) mainly affected the crystal quality of gainnas rather than the n concentration. the n concentration dropped rapidly when t-g exceeded 500 degrees c. considering n desorption alone is insufficient to account for the strong falloff of the n concentration with t-g over 500 degrees c, the effect of thermally-activated n surface segregation must be taken into account. the n concentration was independent of the arsenic pressure and the in concentration in gainnas layers, but inversely proportional to the growth rate. based on the experimental results, a kinetic model including n desorption and surface segregation was developed to analyze quantitatively the n incorporation in mbe growth. (c) 2000 american institute of physics. [s0003-6951(00)00928-1].
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12524]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Pan Z,Li LH,Zhang W,et al. Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy[J]. applied physics letters,2000,77(2):214-216.
APA	Pan Z,Li LH,Zhang W,Lin YW,&Wu RH.(2000).Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy.applied physics letters,77(2),214-216.
MLA	Pan Z,et al."Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy".applied physics letters 77.2(2000):214-216.