Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy

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	Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy
	Ye XL; Xu B
刊名	physica e
	2000
卷号	8 期号:2 页码:134-140
关键词	quantum dots high index molecular beam epitaxy photoluminescence SURFACE SEGREGATION ORIENTED GAAS INGAAS ISLANDS WELLS DISKS
ISSN号	1386-9477
通讯作者	jiang wh,chinese acad sci,inst semicond,inst semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	in this paper, in0.5ga0.5as quantum dots are fabricated on gaas (100) and (n11)a/b (n = 3, 5) substrates by molecular beam epitaxy. atomic force microscopy shows that the quantum dots on each oriented substrate are different in size, shape and distribution. in addition, photoluminescence spectra from these quantum dots are different in emission peak position, line width and integrated intensity. auger electron spectra demonstrate that in concentration is larger near the surface than inside quantum dots, suggesting the occurrence of surface segregation effect during the growth of ingaas dots. the surface segregation effect is found to be related to substrate orientation. (c) 2000 elsevier science b.v. all rights reserved.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12488]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ye XL,Xu B. Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy[J]. physica e,2000,8(2):134-140.
APA	Ye XL,&Xu B.(2000).Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy.physica e,8(2),134-140.
MLA	Ye XL,et al."Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy".physica e 8.2(2000):134-140.