Investigation on anisotropy of vertical-cavity surface-emitting lasers

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Investigation on anisotropy of vertical-cavity surface-emitting lasers
	Liu SA ; Lin SM ; Cheng P ; Zhang GB ; Wang QM ; Chen Y ; Li GH ; Han HX
刊名	journal of applied physics
	2000
卷号	88 期号:5 页码:3102-3104
关键词	SEMICONDUCTOR MICROCAVITIES POLARITON PHOTOLUMINESCENCE SPONTANEOUS EMISSION OPERATION EXCITONS
ISSN号	0021-8979
通讯作者	liu sa,chinese acad sci,inst semicond,natl lab integrated optoelect,beijing 100083,peoples r china.
中文摘要	we have studied the spontaneous emission of polarized excitons in the gainp/algainp vertical-cavity surface-emitting lasers from 50 k to room temperature. it is observed that the spontaneous emission peak enters and leaves the resonant regime. at the resonant regime, the emission intensities of the perpendicularly and horizontally polarized excitons are enhanced and their proportions are different from that in nonresonant regime. these experimental results are explained by the dressed exciton theory of the semiconductor microcavity device. based on this theory, the intensity enhancement and the polarization dependence are understood as cooperative emission and the microcavity anisotropy. (c) 2000 american institute of physics. [s0021-8979(00)05315-9].
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12476]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu SA,Lin SM,Cheng P,et al. Investigation on anisotropy of vertical-cavity surface-emitting lasers[J]. journal of applied physics,2000,88(5):3102-3104.
APA	Liu SA.,Lin SM.,Cheng P.,Zhang GB.,Wang QM.,...&Han HX.(2000).Investigation on anisotropy of vertical-cavity surface-emitting lasers.journal of applied physics,88(5),3102-3104.
MLA	Liu SA,et al."Investigation on anisotropy of vertical-cavity surface-emitting lasers".journal of applied physics 88.5(2000):3102-3104.