Temperature dependence of photoluminescence of an n-i-p-i GaAs superlattice

	Temperature dependence of photoluminescence of an n-i-p-i GaAs superlattice
	Wang JZ ; Wang ZG ; Wang ZM ; Feng SL ; Yang Z
刊名	physical review b
	2000
卷号	62 期号:11 页码:6956-6958
关键词	DOPING SUPER-LATTICES SEMICONDUCTORS CRYSTALS
ISSN号	1098-0121
通讯作者	wang jz,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china.
中文摘要	both the photoluminescence peaks corresponding to the vertical transitions and the nonvertical transitions in an n-i-p-i gaas superlattice are clearly observed. the redshifts of the two peaks with increasing temperature are: discussed in terms of the temperature-dependent carrier separation effect.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12444]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang JZ,Wang ZG,Wang ZM,et al. Temperature dependence of photoluminescence of an n-i-p-i GaAs superlattice[J]. physical review b,2000,62(11):6956-6958.
APA	Wang JZ,Wang ZG,Wang ZM,Feng SL,&Yang Z.(2000).Temperature dependence of photoluminescence of an n-i-p-i GaAs superlattice.physical review b,62(11),6956-6958.
MLA	Wang JZ,et al."Temperature dependence of photoluminescence of an n-i-p-i GaAs superlattice".physical review b 62.11(2000):6956-6958.