Study of rapid carrier capture and relaxation in InAs/GaAs heterostructures

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	Study of rapid carrier capture and relaxation in InAs/GaAs heterostructures
	Li Q ; Xu ZY ; Ge WK
刊名	journal of infrared and millimeter waves
	2000
卷号	19 期号:5 页码:343-346
关键词	ultrafast spectroscopy low-dimension heterostructure III-V semiconductors QUANTUM DOTS ELECTRON RELAXATION GAAS
ISSN号	1001-9014
通讯作者	li q,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china.
中文摘要	the rapid carrier capture and relaxation processes in inas/gaas quantum dots were studied at 77k by using a simple degenerate pump-probe technique. a rising process was observed in the transient reflectivity, following the initial fast relaxation associated with gaas bulk matrix, and this rising process was assigned to be related to the carrier capture from the gaas barriers to inas layers. the assignment was modeled using kramers-kronig relation. by analyzing the rising process observed in the transient reflectivity, the carrier capture time constants were obtained. the measured capture times decrease with the increase of carrier concentration.
学科主题	光电子学
收录类别	SCI
语种	中文
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12392]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li Q,Xu ZY,Ge WK. Study of rapid carrier capture and relaxation in InAs/GaAs heterostructures[J]. journal of infrared and millimeter waves,2000,19(5):343-346.
APA	Li Q,Xu ZY,&Ge WK.(2000).Study of rapid carrier capture and relaxation in InAs/GaAs heterostructures.journal of infrared and millimeter waves,19(5),343-346.
MLA	Li Q,et al."Study of rapid carrier capture and relaxation in InAs/GaAs heterostructures".journal of infrared and millimeter waves 19.5(2000):343-346.