Photoluminescence studies on pseudomorphic delta-doped AlGaAs/InGaAs/GaAs quantum wells

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	Photoluminescence studies on pseudomorphic delta-doped AlGaAs/InGaAs/GaAs quantum wells
	Wang XG ; Chang Y ; Gui YS ; Chu JH ; Cao X ; Zeng YP ; Kong MY
刊名	journal of infrared and millimeter waves
	2000
卷号	19 期号:5 页码:333-337
关键词	p-HEMTs quantum well photoluminescence GAAS
ISSN号	1001-9014
通讯作者	wang xg,chinese acad sci,shanghai inst tech phys,natl lab infrared phys,shanghai 200083,peoples r china.
中文摘要	photoluminescence (pl) measurements were performed on several series of single-side si-doped pseudomorphic high electron mobility transistors (p-hemts) quantum well (qw) samples, with different spacer layer widths, well widths and si delta -doped concentrations , under different temperatures and excitation power densities. the dynamic competitive luminescence mechanism between the radiations of e2-hh1 and e1-hh1 was discussed in detail. the confining potential, subband energies, corresponding envelope functions, subband occupations and transferring efficiency etc., were calculated by self-consistent finite differential method at different temperatures in comparison with the present experiment results. the relative variation of the integrated luminescence intensity of the two transitions (e1-hh1 and e2-hh1) was found to be dependent on the temperature and the structure's properties, e. g. spacer layer width, dopant concentration and well width.
学科主题	光电子学
收录类别	SCI
语种	中文
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12390]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang XG,Chang Y,Gui YS,et al. Photoluminescence studies on pseudomorphic delta-doped AlGaAs/InGaAs/GaAs quantum wells[J]. journal of infrared and millimeter waves,2000,19(5):333-337.
APA	Wang XG.,Chang Y.,Gui YS.,Chu JH.,Cao X.,...&Kong MY.(2000).Photoluminescence studies on pseudomorphic delta-doped AlGaAs/InGaAs/GaAs quantum wells.journal of infrared and millimeter waves,19(5),333-337.
MLA	Wang XG,et al."Photoluminescence studies on pseudomorphic delta-doped AlGaAs/InGaAs/GaAs quantum wells".journal of infrared and millimeter waves 19.5(2000):333-337.