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	Degradation of PMOSFET with ultra-thin gate oxide under SHH stress
	Hu, Shi-Gang; Wu, Xiao-Feng; Xi, Zai-Fang
刊名	Journal of Central South University (Science and Technology)
	2011
卷号	Vol.42 No.9页码:2741-2745
ISSN号	1672-7207
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6515606
专题	湖南大学
作者单位	School of Information and Electrical Engineering, Hunan University of Science and Technology, Xiangtan 411201, China
推荐引用方式 GB/T 7714	Hu, Shi-Gang,Wu, Xiao-Feng,Xi, Zai-Fang. Degradation of PMOSFET with ultra-thin gate oxide under SHH stress[J]. Journal of Central South University (Science and Technology),2011,Vol.42 No.9:2741-2745.
APA	Hu, Shi-Gang,Wu, Xiao-Feng,&Xi, Zai-Fang.(2011).Degradation of PMOSFET with ultra-thin gate oxide under SHH stress.Journal of Central South University (Science and Technology),Vol.42 No.9,2741-2745.
MLA	Hu, Shi-Gang,et al."Degradation of PMOSFET with ultra-thin gate oxide under SHH stress".Journal of Central South University (Science and Technology) Vol.42 No.9(2011):2741-2745.

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