The current-voltage characteristics of n-InGaZnO/p-Si heterojunctions photodiode | |
Zhang, GL; Zeng, Y; Yan, YM; Leng, YQ | |
刊名 | OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
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2011 | |
卷号 | Vol.5 No.9页码:1011-1016 |
关键词 | Photodiode RF magnetron sputtering Photoelectric effect Interface state |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/6514856 |
专题 | 湖南大学 |
作者单位 | Hunan Univ, Sch Phys & Microelect Sci, Changsha 410082, Hunan, Peoples R China |
推荐引用方式 GB/T 7714 | Zhang, GL,Zeng, Y,Yan, YM,et al. The current-voltage characteristics of n-InGaZnO/p-Si heterojunctions photodiode[J]. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS,2011,Vol.5 No.9:1011-1016. |
APA | Zhang, GL,Zeng, Y,Yan, YM,&Leng, YQ.(2011).The current-voltage characteristics of n-InGaZnO/p-Si heterojunctions photodiode.OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS,Vol.5 No.9,1011-1016. |
MLA | Zhang, GL,et al."The current-voltage characteristics of n-InGaZnO/p-Si heterojunctions photodiode".OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS Vol.5 No.9(2011):1011-1016. |
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