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	The current-voltage characteristics of n-InGaZnO/p-Si heterojunctions photodiode
	Zhang, GL; Zeng, Y; Yan, YM; Leng, YQ
刊名	OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
	2011
卷号	Vol.5 No.9页码:1011-1016
关键词	Photodiode RF magnetron sputtering Photoelectric effect Interface state
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6514856
专题	湖南大学
作者单位	Hunan Univ, Sch Phys & Microelect Sci, Changsha 410082, Hunan, Peoples R China
推荐引用方式 GB/T 7714	Zhang, GL,Zeng, Y,Yan, YM,et al. The current-voltage characteristics of n-InGaZnO/p-Si heterojunctions photodiode[J]. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS,2011,Vol.5 No.9:1011-1016.
APA	Zhang, GL,Zeng, Y,Yan, YM,&Leng, YQ.(2011).The current-voltage characteristics of n-InGaZnO/p-Si heterojunctions photodiode.OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS,Vol.5 No.9,1011-1016.
MLA	Zhang, GL,et al."The current-voltage characteristics of n-InGaZnO/p-Si heterojunctions photodiode".OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS Vol.5 No.9(2011):1011-1016.

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