Fine structure of the plasmon resonance absorption peak of Ag nanoparticles embedded in partially oxidized Si matrix

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	Fine structure of the plasmon resonance absorption peak of Ag nanoparticles embedded in partially oxidized Si matrix
	Yang L ; Li GH ; Zhang JG ; Zhang LD ; Liu YL ; Wang QM
刊名	applied physics letters
	2001
卷号	78 期号:1 页码:102-104
关键词	SMALL METAL PARTICLES OPTICAL-PROPERTIES DEPENDENCE SURFACE SILVER BULK
ISSN号	0003-6951
通讯作者	yang l,chinese acad sci,inst solid state phys,hefei 230031,peoples r china.
中文摘要	ag/si nanocomposite films were prepared by the radio-frequency magnetron cosputtering method. the fine structure of the plasmon resonance absorption peak was found in film samples. x-ray photoelectron spectroscopy analysis indicated that the samples were composed of a two-layer structure, which accounted for the structure of the optical absorption spectra. the peak located near 445 nm is the plasmon resonance absorption peak of ag nanoparticles embedded in a partially oxidized si matrix. its intensity decreases with decreasing film thickness and disappears in a very thin sample. the peak located near 380 nm originates from the plasmon resonance absorption of the thoroughly oxidized surface layer of the sample. its intensity does not change with increasing thickness, but it cannot be observed in the very thick sample. (c) 2001 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12328]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yang L,Li GH,Zhang JG,et al. Fine structure of the plasmon resonance absorption peak of Ag nanoparticles embedded in partially oxidized Si matrix[J]. applied physics letters,2001,78(1):102-104.
APA	Yang L,Li GH,Zhang JG,Zhang LD,Liu YL,&Wang QM.(2001).Fine structure of the plasmon resonance absorption peak of Ag nanoparticles embedded in partially oxidized Si matrix.applied physics letters,78(1),102-104.
MLA	Yang L,et al."Fine structure of the plasmon resonance absorption peak of Ag nanoparticles embedded in partially oxidized Si matrix".applied physics letters 78.1(2001):102-104.