Comparison of field effect transistor characteristics between space-grown and earth-grown gallium arsenide single crystal substrates

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	Comparison of field effect transistor characteristics between space-grown and earth-grown gallium arsenide single crystal substrates
	Chen NF ; Zhong XR ; Lin LY ; Zhang M ; Wang YS ; Bai XW ; Zhao J
刊名	applied physics letters
	2001
卷号	78 期号:4 页码:478-479
关键词	FLOATING-ZONE GROWTH ZERO GRAVITY MICROGRAVITY STOICHIOMETRY SEGREGATION SILICON GE
ISSN号	0003-6951
通讯作者	chen nf,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	semi-insulating gallium arsenide single crystal grown in space has been used in fabricating low noise field effect transistors and analog switch integrated circuits by the direct ion-implantation technique. all key electrical properties of these transistors and integrated circuits have surpassed those made from conventional earth-grown gallium arsenide. this result shows that device-grade space-grown semiconducting single crystal has surpassed the best terrestrial counterparts. (c) 2001 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12324]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen NF,Zhong XR,Lin LY,et al. Comparison of field effect transistor characteristics between space-grown and earth-grown gallium arsenide single crystal substrates[J]. applied physics letters,2001,78(4):478-479.
APA	Chen NF.,Zhong XR.,Lin LY.,Zhang M.,Wang YS.,...&Zhao J.(2001).Comparison of field effect transistor characteristics between space-grown and earth-grown gallium arsenide single crystal substrates.applied physics letters,78(4),478-479.
MLA	Chen NF,et al."Comparison of field effect transistor characteristics between space-grown and earth-grown gallium arsenide single crystal substrates".applied physics letters 78.4(2001):478-479.