In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE

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	In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE
	Lu DC ; Wang CX ; Yuan HR ; Liu XL ; Wang XH
刊名	journal of crystal growth
	2000
卷号	221 期号:0 页码:356-361
关键词	GaN annealing treatment In-doping MOVPE photoluminescence CHEMICAL-VAPOR-DEPOSITION PHASE EPITAXY BUFFER LAYER FILMS SAPPHIRE
ISSN号	0022-0248
通讯作者	lu dc,chinese acad sci,inst semicond,lab semicond mat & sci,pob 912,beijing 100083,peoples r china.
中文摘要	the effects of in situ annealing treatment in the initial growth stage and in-doping during growth of the gan on the material properties were investigated. gan was grown by lp-movpe. in situ annealing reduced the full-width at half-maximum (fwhm) of x-ray rocking curves and reduced etch pit density of gan films. it improved the optical properties of the epilayer. undoped and in-doped gan films of initial growth stage were investigated. it was found that morphology and optical properties were improved in in-doped samples. (c) 2000 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12316]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Lu DC,Wang CX,Yuan HR,et al. In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE[J]. journal of crystal growth,2000,221(0):356-361.
APA	Lu DC,Wang CX,Yuan HR,Liu XL,&Wang XH.(2000).In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE.journal of crystal growth,221(0),356-361.
MLA	Lu DC,et al."In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE".journal of crystal growth 221.0(2000):356-361.