Photoluminescence studies of type-II self-assembled InAlAs/AlGaAs QDs grown on (311)A GaAs substrate

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	Photoluminescence studies of type-II self-assembled InAlAs/AlGaAs QDs grown on (311)A GaAs substrate
	Chen Y ; Li GH ; Zhu ZM ; Han HX ; Wang ZP ; Zhou W ; Wang ZG
刊名	journal of infrared and millimeter waves
	2001
卷号	20 期号:1 页码:53-56
关键词	InAlAs/AlGaAs quantum dot pressure photoluminescence QUANTUM DOTS PRESSURE SUPERLATTICES LINEWIDTH INSB GASB
ISSN号	1001-9014
通讯作者	chen y,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china.
中文摘要	the photoluminescence (pl) spectra of self-assembled in0.55al0.45as/al0.45ga0.5as quantum dots (qd) grown on (311)a gaas substrate were measured. the type- i character of pl related to the x valley was verified by excitation power dependence of peak position and the pl spectra under different pressure , which was attributed to the type- ii transition from x valley in al0.5ga0.5as to heavy holes in in0.55al0.45as the high energy gamma -related transition was also observed above 70k and assigned as the transition between gamma valley and heavy holes in in-0.55 al0.45as. the x-valley split was discussed to interpret the observed second x-related peak under pressure.
学科主题	光电子学
收录类别	SCI
语种	中文
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12288]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen Y,Li GH,Zhu ZM,et al. Photoluminescence studies of type-II self-assembled InAlAs/AlGaAs QDs grown on (311)A GaAs substrate[J]. journal of infrared and millimeter waves,2001,20(1):53-56.
APA	Chen Y.,Li GH.,Zhu ZM.,Han HX.,Wang ZP.,...&Wang ZG.(2001).Photoluminescence studies of type-II self-assembled InAlAs/AlGaAs QDs grown on (311)A GaAs substrate.journal of infrared and millimeter waves,20(1),53-56.
MLA	Chen Y,et al."Photoluminescence studies of type-II self-assembled InAlAs/AlGaAs QDs grown on (311)A GaAs substrate".journal of infrared and millimeter waves 20.1(2001):53-56.