Band Alignment for Ambipolar-Doping of SnxZn1−xTe Alloys | |
Yuan, XJ; Liu, JZ; Ning, F; Zhang, Y; Tang, LM | |
刊名 | Communications in Theoretical Physics
![]() |
2012 | |
卷号 | Vol.57 No.4页码:723 |
ISSN号 | 0253-6102 |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/6507009 |
专题 | 湖南大学 |
作者单位 | 1.Hunan Univ, Dept Appl Phys, Changsha 410082, Hunan, Peoples R China 2.Hunan Univ, Key Lab Micronano Phys & Technol Hunan Prov, Changsha 410082, Hunan, Peoples R China |
推荐引用方式 GB/T 7714 | Yuan, XJ,Liu, JZ,Ning, F,et al. Band Alignment for Ambipolar-Doping of SnxZn1−xTe Alloys[J]. Communications in Theoretical Physics,2012,Vol.57 No.4:723. |
APA | Yuan, XJ,Liu, JZ,Ning, F,Zhang, Y,&Tang, LM.(2012).Band Alignment for Ambipolar-Doping of SnxZn1−xTe Alloys.Communications in Theoretical Physics,Vol.57 No.4,723. |
MLA | Yuan, XJ,et al."Band Alignment for Ambipolar-Doping of SnxZn1−xTe Alloys".Communications in Theoretical Physics Vol.57 No.4(2012):723. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论