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	Fabrication of 150-nm AlInAs/GaInAs mHEMTs on GaAs substrates
	Wu, Xiaofeng; Liu, Hongxia; Li, Haiou; Li, Qi; Hu, Shigang; Xi, Zaifang; Zhao, Jin
刊名	Science China Physics, Mechanics and Astronomy
	2012
卷号	Vol.55 No.12页码:2389-2391
关键词	AlInAs/GaInAs mHEMTs GaAs substrate T-gate
ISSN号	1674-7348;1869-1927
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6506209
专题	湖南大学
作者单位	1.School of Information and Electrical Engineering, Hunan University of Science and Technology, Xiangtan 411201, China 2.Guilin University of Electronic Technology, Guilin 541004, China 3.School of Microelectronics, Xidian University, Xi'an 710071,
推荐引用方式 GB/T 7714	Wu, Xiaofeng,Liu, Hongxia,Li, Haiou,et al. Fabrication of 150-nm AlInAs/GaInAs mHEMTs on GaAs substrates[J]. Science China Physics, Mechanics and Astronomy,2012,Vol.55 No.12:2389-2391.
APA	Wu, Xiaofeng.,Liu, Hongxia.,Li, Haiou.,Li, Qi.,Hu, Shigang.,...&Zhao, Jin.(2012).Fabrication of 150-nm AlInAs/GaInAs mHEMTs on GaAs substrates.Science China Physics, Mechanics and Astronomy,Vol.55 No.12,2389-2391.
MLA	Wu, Xiaofeng,et al."Fabrication of 150-nm AlInAs/GaInAs mHEMTs on GaAs substrates".Science China Physics, Mechanics and Astronomy Vol.55 No.12(2012):2389-2391.

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