| A New Bipolar Type Transistor Created Based on Interface Effects of Integrated All Perovskite Oxides. | |
| Xia, FJ; Wu, H; Fu, YJ; Xu, B; Yuan, J; Zhu, BY; Qiu, XG; Cao, LX; Li, JJ; Jin, AZ | |
| 刊名 | Chinese Physics Letters
 |
| 2012 | |
| 卷号 | Vol.29 No.10页码:1-6 |
| 关键词 | BIPOLAR transistors PEROVSKITE METALLIC oxides ELECTRONIC circuits ELECTRIC power consumption FERROELECTRICITY MAGNETORESISTANCE |
| ISSN号 | 0256-307X |
| URL标识 | 查看原文 |
| 公开日期 | [db:dc_date_available] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/6506115 |
| 专题 | 湖南大学 |
| 作者单位 | 1.Chinese Acad Sci, Inst Phys, Natl Lab Superconduct, Beijing 100190, Peoples R China 2.Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100190, Peoples R China 3.Hunan Univ, Sch Phys & Microelect Sci, Changsha 410082, Hunan, Peoples R China 4.Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China 5.Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China 6.Wuhan Univ Sci & Technol, Dept Mat Sci, Wuhan 430081, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xia, FJ,Wu, H,Fu, YJ,et al. A New Bipolar Type Transistor Created Based on Interface Effects of Integrated All Perovskite Oxides.[J]. Chinese Physics Letters,2012,Vol.29 No.10:1-6. |
| APA | Xia, FJ.,Wu, H.,Fu, YJ.,Xu, B.,Yuan, J.,...&Jin, AZ.(2012).A New Bipolar Type Transistor Created Based on Interface Effects of Integrated All Perovskite Oxides..Chinese Physics Letters,Vol.29 No.10,1-6. |
| MLA | Xia, FJ,et al."A New Bipolar Type Transistor Created Based on Interface Effects of Integrated All Perovskite Oxides.".Chinese Physics Letters Vol.29 No.10(2012):1-6. |
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