| A New Bipolar Type Transistor Created Based on Interface Effects of Integrated All Perovskite Oxides | |
| Xia Feng-Jin; Wu Hao; Fu Yue-Ju; Xu Bo; Yuan Jie; Zhu Bei-Yi; Qiu Xiang-Gang; Cao Li-Xin; Li Jun-Jie; Jin Ai-Zi | |
| 刊名 | Chinese Physics Letters
 |
| 2012 | |
| 卷号 | Vol.29 No.10页码:107402 |
| ISSN号 | 0256-307X |
| URL标识 | 查看原文 |
| 公开日期 | [db:dc_date_available] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/6505960 |
| 专题 | 湖南大学 |
| 作者单位 | 1.brzhao@aphy.iphy.ac.cn 2.National Laboratory for Superconductivity, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190 3.School of Physics and Microelectronic Science, Hunan University, Changsha 410082 4.School of Physics and Technology, Wuhan University, Wuhan 430072 5.College of Physics Science and Technology, Hebei University, Baoding 071002 6.Department of Materials Science, Wuhan University of Science and Technology, Wuhan 430081 |
| 推荐引用方式 GB/T 7714 | Xia Feng-Jin,Wu Hao,Fu Yue-Ju,et al. A New Bipolar Type Transistor Created Based on Interface Effects of Integrated All Perovskite Oxides[J]. Chinese Physics Letters,2012,Vol.29 No.10:107402. |
| APA | Xia Feng-Jin.,Wu Hao.,Fu Yue-Ju.,Xu Bo.,Yuan Jie.,...&Xie Zhong and Zhao Bai-Ru.(2012).A New Bipolar Type Transistor Created Based on Interface Effects of Integrated All Perovskite Oxides.Chinese Physics Letters,Vol.29 No.10,107402. |
| MLA | Xia Feng-Jin,et al."A New Bipolar Type Transistor Created Based on Interface Effects of Integrated All Perovskite Oxides".Chinese Physics Letters Vol.29 No.10(2012):107402. |
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