Changing the size and shape of Ge island by chemical etching

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	Changing the size and shape of Ge island by chemical etching
	Gao F ; Huang CJ ; Huang DD ; Li JP ; Sun DZ ; Kong MY ; Zeng YP ; Li JM ; Lin LY
刊名	journal of crystal growth
	2001
卷号	231 期号:1-2 页码:17-21
关键词	atomic force microscopy etching nanostructures molecular beam epitaxy semiconducting germanium semiconducting silicon QUANTUM DOTS INAS GROWTH STRAIN
ISSN号	0022-0248
通讯作者	gao f,chinese acad sci,inst semicond,ctr mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	self-assembled ge islands were grown on si (1 0 0) substrate by si2h6-ge molecular beam epitaxy. subjected to a chemical etching, it is found that the size and shape (i.e. ratio of height to base width) of ge islands change with etching time. in addition, the photoluminescence from the etched ge islands shifted to the higher energy side compared to that of the as-deposited ge islands. our results demonstrated that chemical etching can be a way to change the size and shape of the as-deposited islands as well as their luminescence property. (c) 2001 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12128]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Gao F,Huang CJ,Huang DD,et al. Changing the size and shape of Ge island by chemical etching[J]. journal of crystal growth,2001,231(1-2):17-21.
APA	Gao F.,Huang CJ.,Huang DD.,Li JP.,Sun DZ.,...&Lin LY.(2001).Changing the size and shape of Ge island by chemical etching.journal of crystal growth,231(1-2),17-21.
MLA	Gao F,et al."Changing the size and shape of Ge island by chemical etching".journal of crystal growth 231.1-2(2001):17-21.