Si-based resonant-cavity-enhanced photodetector

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Si-based resonant-cavity-enhanced photodetector
	Wang QM ; Li C ; Cheng BW ; Yang QQ
刊名	optical engineering
	2001
卷号	40 期号:7 页码:1192-1194
关键词	RCE photodetector SlGe/Si SIMOX Bragg reflector top-illumination bottom-illumination responsivity spectra
ISSN号	0091-3286
通讯作者	wang qm,chinese acad sci,inst semicond,state key lab integrated optoelect,beijing 100083,peoples r china.
中文摘要	we report one top-illumination and one bottom-illumination sige/si multiple quantum-well (mqw) resonant-cavity-enhanced (rce) photodetector fabricated on a separation-by-implanted-oxygen (simox) wafer operating near 1300 nm. the buried oxygen layer in simox is used as a mirror to form a vertical cavity with the silicon dioxide/silicon bragg reflector deposited on the top surface. a peak responsivity with a reverse bias of 5 v is measured 10.2 ma/w at 1285 nm, a full width at half maximum of 25 nm for the top-illumination rce photodetector, 19 ma/w at 1305 nm, and a full width at half maximum of 14 nm for the bottom-illumination one. the external quantum efficiency of the bottom-illumination rce photodetector is up to 2.9% at 1305 nm, with a reverse bias of 25v. the responsivity of the bottom-illumination rce photodetector is improved by two-fold compared with that of the top-illumination one. (c) 2001 society of photo-optical instrumentation engineers.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12118]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang QM,Li C,Cheng BW,et al. Si-based resonant-cavity-enhanced photodetector[J]. optical engineering,2001,40(7):1192-1194.
APA	Wang QM,Li C,Cheng BW,&Yang QQ.(2001).Si-based resonant-cavity-enhanced photodetector.optical engineering,40(7),1192-1194.
MLA	Wang QM,et al."Si-based resonant-cavity-enhanced photodetector".optical engineering 40.7(2001):1192-1194.