Carbonization process of Si(100) by ion-beam bombardment

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	Carbonization process of Si(100) by ion-beam bombardment
	Liao MY ; Chai CL ; Yao ZY ; Yang SY ; Liu ZK ; Wang ZG
刊名	journal of crystal growth
	2001
卷号	233 期号:3 页码:446-450
关键词	diffusion growth models ion bombardment reflection high energy electron diffraction physical vapor phase deposition semiconducting silicon compounds CUBIC GAN GROWTH DEPOSITION EPITAXY SILICON DIAMOND
ISSN号	0022-0248
通讯作者	liao my,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china.
中文摘要	the evolution of carbonization process on si as a function of ion dose has been carried out by mass-selected ion-beam deposition technique. 3c-sic layer has been obtained at low ion dose, which has been observed by reflection high energy electron diffraction and x-ray photoelectron spectroscopy (xps). the chemical states of si and carbon have also been examined as a function of ion dose by xps. carbon enrichment was found regardless of the used ion dose here, which may be due to the high deposition rate. the formation mechanism of sic has also been discussed based on the subplantation process. the work will also provide further understanding of the ion-bombardment effect. (c) 2001 published by elsevier science b.v.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12086]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liao MY,Chai CL,Yao ZY,et al. Carbonization process of Si(100) by ion-beam bombardment[J]. journal of crystal growth,2001,233(3):446-450.
APA	Liao MY,Chai CL,Yao ZY,Yang SY,Liu ZK,&Wang ZG.(2001).Carbonization process of Si(100) by ion-beam bombardment.journal of crystal growth,233(3),446-450.
MLA	Liao MY,et al."Carbonization process of Si(100) by ion-beam bombardment".journal of crystal growth 233.3(2001):446-450.