Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats

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	Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats
	Gao YZ ; Kan H ; Gao FS ; Gong XY ; Yamaguchi T
刊名	journal of crystal growth
	2002
卷号	234 期号:1 页码:85-90
关键词	purification X-ray diffraction melt epitaxy narrow gap materials semiconducting III-V materials CUTOFF WAVELENGTH SINGLE-CRYSTALS MU-M INFRARED PHOTODETECTORS GAAS
ISSN号	0022-0248
通讯作者	yamaguchi t,shizuoka univ,elect res inst,3-5-1 johoku,hamamatsu,shizuoka 432,japan.
中文摘要	in this study, we first present the process of the melt epitaxial (me) growth method, and the improvement of low-temperature electron mobility of the long-wavelength inassb epilayers grown by me in a fused silica boat. the electrical properties were investigated by van der pauw measurement at 300 and 77 k. it is seen that the electron mobility of the inassb samples grown by graphite boat decreased from 55,700 to 26,600 cm(2)/v s when the temperature was reduced from 300 to 77 k, while for the samples grown by fused silica boat, the electron mobility increased from 52,600 at 300 k to 54,400 cm(2)/v s at 77 k. the electron mobility of 54,400cm(2)/vs is the best result, so far, for the inassb materials with cutoff wavelength of 8-12 mum at 77 k. this may be attributed to the reduction of the carbon contamination by using a fused silica boat instead of a graphite boat. (c) 2002 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12038]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Gao YZ,Kan H,Gao FS,et al. Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats[J]. journal of crystal growth,2002,234(1):85-90.
APA	Gao YZ,Kan H,Gao FS,Gong XY,&Yamaguchi T.(2002).Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats.journal of crystal growth,234(1),85-90.
MLA	Gao YZ,et al."Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats".journal of crystal growth 234.1(2002):85-90.