InAs/GaAs single-electron quantum dot qubit | |
Li SS ; Xia JB ; Liu JL ; Yang FH ; Niu ZC ; Feng SL ; Zheng HZ | |
刊名 | journal of applied physics
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2001 | |
卷号 | 90期号:12页码:6151-6155 |
关键词 | PHASE BREAKING LOGIC GATES COMPUTATION COMPUTERS STATE |
ISSN号 | 0021-8979 |
通讯作者 | li ss,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china. |
中文摘要 | the time evolution of the quantum mechanical state of an electron is calculated in the framework of the effective-mass envelope function theory for an inas/gaas quantum dot. the results indicate that the superposition state electron density oscillates in the quantum dot, with a period on the order of femtoseconds. the interaction energy e-ij between two electrons located in different quantum dots is calculated for one electron in the ith pure quantum state and another in the jth pure quantum state. we find that e-11]e-12]e-22, and e-ij decreases as the distance between the two quantum dots increases. we present a parameter-phase diagram which defines the parameter region for the use of an inas/gaas quantum dot as a two-level quantum system in quantum computation. a static electric field is found to efficiently prolong the decoherence time. our results should be useful for designing the solid-state implementation of quantum computing. (c) 2001 american institute of physics. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/12030] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Li SS,Xia JB,Liu JL,et al. InAs/GaAs single-electron quantum dot qubit[J]. journal of applied physics,2001,90(12):6151-6155. |
APA | Li SS.,Xia JB.,Liu JL.,Yang FH.,Niu ZC.,...&Zheng HZ.(2001).InAs/GaAs single-electron quantum dot qubit.journal of applied physics,90(12),6151-6155. |
MLA | Li SS,et al."InAs/GaAs single-electron quantum dot qubit".journal of applied physics 90.12(2001):6151-6155. |
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