InAs/GaAs single-electron quantum dot qubit

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	InAs/GaAs single-electron quantum dot qubit
	Li SS ; Xia JB ; Liu JL ; Yang FH ; Niu ZC ; Feng SL ; Zheng HZ
刊名	journal of applied physics
	2001
卷号	90 期号:12 页码:6151-6155
关键词	PHASE BREAKING LOGIC GATES COMPUTATION COMPUTERS STATE
ISSN号	0021-8979
通讯作者	li ss,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china.
中文摘要	the time evolution of the quantum mechanical state of an electron is calculated in the framework of the effective-mass envelope function theory for an inas/gaas quantum dot. the results indicate that the superposition state electron density oscillates in the quantum dot, with a period on the order of femtoseconds. the interaction energy e-ij between two electrons located in different quantum dots is calculated for one electron in the ith pure quantum state and another in the jth pure quantum state. we find that e-11]e-12]e-22, and e-ij decreases as the distance between the two quantum dots increases. we present a parameter-phase diagram which defines the parameter region for the use of an inas/gaas quantum dot as a two-level quantum system in quantum computation. a static electric field is found to efficiently prolong the decoherence time. our results should be useful for designing the solid-state implementation of quantum computing. (c) 2001 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12030]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li SS,Xia JB,Liu JL,et al. InAs/GaAs single-electron quantum dot qubit[J]. journal of applied physics,2001,90(12):6151-6155.
APA	Li SS.,Xia JB.,Liu JL.,Yang FH.,Niu ZC.,...&Zheng HZ.(2001).InAs/GaAs single-electron quantum dot qubit.journal of applied physics,90(12),6151-6155.
MLA	Li SS,et al."InAs/GaAs single-electron quantum dot qubit".journal of applied physics 90.12(2001):6151-6155.