The PL "violet shift" of cerium dioxide on silicon

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	The PL "violet shift" of cerium dioxide on silicon
	Chai CL ; Yang SY ; Liu ZK ; Liao MY ; Chen NF ; Wang ZG
刊名	chinese science bulletin
	2001
卷号	46 期号:24 页码:2046-2048
关键词	cerium dioxide thin film PL violet shift THIN-FILMS DEPOSITION CEO2 INTERFACE OXIDES GROWTH
ISSN号	1001-6538
通讯作者	chai cl,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china.
中文摘要	ceo2 thin film was fabricated by dual ion beam epitaxial technique. the phenomenon of pl violet shift at room temperature was observed, and the distance of shift was about 65 nm. after the analysis of crystal structure and valence in the compound were carried out by xrd and xps technique, it was concluded that the pl shift was related with valence of cerium ion in the oxides. when the valence of cerium ion varied front tetravalence to trivalence, the pl peak position would move from blue region to violet region and the phenomenon of "violet shift" was observed.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12010]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chai CL,Yang SY,Liu ZK,et al. The PL "violet shift" of cerium dioxide on silicon[J]. chinese science bulletin,2001,46(24):2046-2048.
APA	Chai CL,Yang SY,Liu ZK,Liao MY,Chen NF,&Wang ZG.(2001).The PL "violet shift" of cerium dioxide on silicon.chinese science bulletin,46(24),2046-2048.
MLA	Chai CL,et al."The PL "violet shift" of cerium dioxide on silicon".chinese science bulletin 46.24(2001):2046-2048.