Nanodiamond formation by hot-filament chemical vapor deposition on carbon ions bombarded Si

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Nanodiamond formation by hot-filament chemical vapor deposition on carbon ions bombarded Si
	Liao MY ; Meng XM ; Zhou XT ; Hu JQ ; Wang ZG
刊名	journal of crystal growth
	2002
卷号	236 期号:1-3 页码:85-89
关键词	nucleation chemical vapor deposition processes diamond nanomaterials DIAMOND THIN-FILMS AMORPHOUS-CARBON PLASMAS SYSTEM FIELD
ISSN号	0022-0248
通讯作者	liao my,chinese acad sci,inst semicond,lab semicond mat science,beijing 100083,peoples r china.
中文摘要	nanocrystalline diamond films were grown by a two-step process on si(1 0 0) substrate, which was first pretreated by pure carbon ions bombardment. the bombarded si substrate was then transformed into a hot-filament chemical vapor deposition (hfcvd) system for further growth. using the usual ch4/h-3 feed gas ratio for micro crystalline diamond growth, nanodiamond crystallites were obtained. the diamond nucleation density is comparable to that obtained by biasing the substrate. the uniformly distributed lattice damage is proposed to be responsible for the formation of the nanodiamond. (c) 2002 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11956]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liao MY,Meng XM,Zhou XT,et al. Nanodiamond formation by hot-filament chemical vapor deposition on carbon ions bombarded Si[J]. journal of crystal growth,2002,236(1-3):85-89.
APA	Liao MY,Meng XM,Zhou XT,Hu JQ,&Wang ZG.(2002).Nanodiamond formation by hot-filament chemical vapor deposition on carbon ions bombarded Si.journal of crystal growth,236(1-3),85-89.
MLA	Liao MY,et al."Nanodiamond formation by hot-filament chemical vapor deposition on carbon ions bombarded Si".journal of crystal growth 236.1-3(2002):85-89.