The mechanism of blueshift in excitation-intensity-dependent photo luminescence spectrum of nitride multiple quantum wells
Han PD
刊名journal of luminescence
2002
卷号99期号:1页码:35-38
关键词photoluminescence excitation transfer mechanism GAN InGaN MOCVD INGAN SINGLE EMISSION POLARIZATION
ISSN号0022-2313
通讯作者lu dc,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要(1 1 (2) over bar 0) gan/ingan multiple quantum wells (mqws) were grown on (1 (2) over bar 0 2) sapphire by metal-organic vapor phase epitaxy. the excitation-intensity-dependent photoluminescence (pl) spectrum of these samples was measured, and no peak shift was observed. this phenomenon was attributed to the absence of piezoelectric field (pef) along the growth orientation of the (1 1 (2) over bar 0) face mqws. our experimental results showed that pef was the main reason causing peak blueshift in excitation-intensity-dependent pl spectrum of (0 0 0 1) ingan/gan niqws. it was expected that fabricating (1 1 (2) over bar 0) face nitride device should be a method to avoid pef and get low-threshold, high-quantum-efficiency and stable-emission-wavelength light-emission devices. (c) 2002 elsevier science b.v. all rights reserved.
学科主题光电子学
收录类别SCI
语种英语
公开日期2010-08-12
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/11830]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Han PD. The mechanism of blueshift in excitation-intensity-dependent photo luminescence spectrum of nitride multiple quantum wells[J]. journal of luminescence,2002,99(1):35-38.
APA Han PD.(2002).The mechanism of blueshift in excitation-intensity-dependent photo luminescence spectrum of nitride multiple quantum wells.journal of luminescence,99(1),35-38.
MLA Han PD."The mechanism of blueshift in excitation-intensity-dependent photo luminescence spectrum of nitride multiple quantum wells".journal of luminescence 99.1(2002):35-38.
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