The mechanism of blueshift in excitation-intensity-dependent photo luminescence spectrum of nitride multiple quantum wells | |
Han PD![]() | |
刊名 | journal of luminescence
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2002 | |
卷号 | 99期号:1页码:35-38 |
关键词 | photoluminescence excitation transfer mechanism GAN InGaN MOCVD INGAN SINGLE EMISSION POLARIZATION |
ISSN号 | 0022-2313 |
通讯作者 | lu dc,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
中文摘要 | (1 1 (2) over bar 0) gan/ingan multiple quantum wells (mqws) were grown on (1 (2) over bar 0 2) sapphire by metal-organic vapor phase epitaxy. the excitation-intensity-dependent photoluminescence (pl) spectrum of these samples was measured, and no peak shift was observed. this phenomenon was attributed to the absence of piezoelectric field (pef) along the growth orientation of the (1 1 (2) over bar 0) face mqws. our experimental results showed that pef was the main reason causing peak blueshift in excitation-intensity-dependent pl spectrum of (0 0 0 1) ingan/gan niqws. it was expected that fabricating (1 1 (2) over bar 0) face nitride device should be a method to avoid pef and get low-threshold, high-quantum-efficiency and stable-emission-wavelength light-emission devices. (c) 2002 elsevier science b.v. all rights reserved. |
学科主题 | 光电子学 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/11830] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Han PD. The mechanism of blueshift in excitation-intensity-dependent photo luminescence spectrum of nitride multiple quantum wells[J]. journal of luminescence,2002,99(1):35-38. |
APA | Han PD.(2002).The mechanism of blueshift in excitation-intensity-dependent photo luminescence spectrum of nitride multiple quantum wells.journal of luminescence,99(1),35-38. |
MLA | Han PD."The mechanism of blueshift in excitation-intensity-dependent photo luminescence spectrum of nitride multiple quantum wells".journal of luminescence 99.1(2002):35-38. |
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