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	Angular effects on F+etching SiC: MD study
	Chen, Xu; Tian, Shuping; He, Pingni; Zhao, Chengli; Sun, Weizhong; Zhang, Junyuan; Chen, Feng; Gou, Fujun
	2012
卷号	14期号:12页码:1102-1105
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6486967
专题	贵州大学
作者单位	1.[1] Institute of Nuclear Science and Technology, Key Lab of Radiation Physics and Technology Ministry of Education, Sichuan University, Chengdu 610064, China 2.[2] Institute of Plasma Surface Interactions, Guizhou University, Guiyang 550025, China 3.[3] FOM Institute for Plasma Physics, 3439 MN Nieuwegein, Netherlands
推荐引用方式 GB/T 7714	Chen, Xu,Tian, Shuping,He, Pingni,et al. Angular effects on F+etching SiC: MD study[J],2012,14(12):1102-1105.
APA	Chen, Xu.,Tian, Shuping.,He, Pingni.,Zhao, Chengli.,Sun, Weizhong.,...&Gou, Fujun.(2012).Angular effects on F+etching SiC: MD study.,14(12),1102-1105.
MLA	Chen, Xu,et al."Angular effects on F+etching SiC: MD study".14.12(2012):1102-1105.

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