Organic thin-film transistor memory with Ag floating-gate

	Organic thin-film transistor memory with Ag floating-gate
	Wang W ; Ma DG ; Gao Q
刊名	microelectronic engineering
	2012
卷号	91 页码:9-13
关键词	FIELD-EFFECT TRANSISTOR NONVOLATILE MEMORY INSULATOR PERFORMANCE
ISSN号	0167-9317
通讯作者	wang w
中文摘要	organic thin-film transistor memories were realized by inserting a floating-gate layer in the nylon 6 gate dielectrics. the transistors presented significant hysteresis behaviors and memory effect. the performance of the transistor memories, such as the memory window and the retention time, was improved greatly by using the separated silver nanoparticles instead of the silver film as the floating-gate. after the ito source-drain electrode of the transistors treated by the oxygen plasma, the performance was further improved. the operation mechanism of the presented transistor memories was also provided and discussed. (c) 2011 elsevier b.v. all rights reserved.
收录类别	SCI收录期刊论文
语种	英语
WOS记录号	WOS:000300919000002
公开日期	2013-06-08
内容类型	期刊论文
源URL	[http://ir.ciac.jl.cn/handle/322003/48303]
专题	长春应用化学研究所_长春应用化学研究所知识产出_期刊论文
推荐引用方式 GB/T 7714	Wang W,Ma DG,Gao Q. Organic thin-film transistor memory with Ag floating-gate[J]. microelectronic engineering,2012,91:9-13.
APA	Wang W,Ma DG,&Gao Q.(2012).Organic thin-film transistor memory with Ag floating-gate.microelectronic engineering,91,9-13.
MLA	Wang W,et al."Organic thin-film transistor memory with Ag floating-gate".microelectronic engineering 91(2012):9-13.