Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates | |
Shen XM ; Fu Y ; Feng G ; Zhang BS ; Feng ZH ; Wang YT ; Yang H | |
刊名 | journal of crystal growth
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2002 | |
卷号 | 246期号:1-2页码:69-72 |
关键词 | transmission electron microscopy X-ray diffraction epitaxial lateral overgrowth metalorganic vapor phase epitaxy cubic gallium nitride CHEMICAL-VAPOR-DEPOSITION CUBIC GAN PHASE EPITAXY REDUCTION GROWTH |
ISSN号 | 0022-0248 |
通讯作者 | shen xm,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china. |
中文摘要 | epitaxial lateral overgrown (elo) cubic gan (c-gan) on sio2 patterned gan/gaas(0 0 1) substrates by metalorganic vapor phase epitaxy was investigated using transmission electron microscopy and x-ray diffraction (xrd) measurements. the density of stacking faults (sfs) in elo c-gan was similar to6 x 10(8) cm(-2), while that in underlying gan template was similar to5 x 10(9) cm(-2). xrd measurements showed that the full-width at half-maximum of c-gan (0 0 2) rocking curve decreased from 33 to 17.8 arcmin, indicating the improved crystalline quality of elo c-gan. the mechanism of sf reduction in elo c-gan was also discussed. (c) 2002 elsevier science b.v. all rights reserved. |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/11744] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Shen XM,Fu Y,Feng G,et al. Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates[J]. journal of crystal growth,2002,246(1-2):69-72. |
APA | Shen XM.,Fu Y.,Feng G.,Zhang BS.,Feng ZH.,...&Yang H.(2002).Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates.journal of crystal growth,246(1-2),69-72. |
MLA | Shen XM,et al."Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates".journal of crystal growth 246.1-2(2002):69-72. |
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