Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates
Shen XM ; Fu Y ; Feng G ; Zhang BS ; Feng ZH ; Wang YT ; Yang H
刊名journal of crystal growth
2002
卷号246期号:1-2页码:69-72
关键词transmission electron microscopy X-ray diffraction epitaxial lateral overgrowth metalorganic vapor phase epitaxy cubic gallium nitride CHEMICAL-VAPOR-DEPOSITION CUBIC GAN PHASE EPITAXY REDUCTION GROWTH
ISSN号0022-0248
通讯作者shen xm,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china.
中文摘要epitaxial lateral overgrown (elo) cubic gan (c-gan) on sio2 patterned gan/gaas(0 0 1) substrates by metalorganic vapor phase epitaxy was investigated using transmission electron microscopy and x-ray diffraction (xrd) measurements. the density of stacking faults (sfs) in elo c-gan was similar to6 x 10(8) cm(-2), while that in underlying gan template was similar to5 x 10(9) cm(-2). xrd measurements showed that the full-width at half-maximum of c-gan (0 0 2) rocking curve decreased from 33 to 17.8 arcmin, indicating the improved crystalline quality of elo c-gan. the mechanism of sf reduction in elo c-gan was also discussed. (c) 2002 elsevier science b.v. all rights reserved.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-08-12
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/11744]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Shen XM,Fu Y,Feng G,et al. Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates[J]. journal of crystal growth,2002,246(1-2):69-72.
APA Shen XM.,Fu Y.,Feng G.,Zhang BS.,Feng ZH.,...&Yang H.(2002).Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates.journal of crystal growth,246(1-2),69-72.
MLA Shen XM,et al."Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates".journal of crystal growth 246.1-2(2002):69-72.
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