Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells
	Cheng BW ; Zhang JG ; Zuo YH ; Mao RW ; Huang CJ ; Luo LP ; Yao F ; Wang QM
刊名	international journal of modern physics b
	2002
卷号	16 期号:28-29 页码:4211-4214
关键词	SI-GE ALLOYS GROWTH LAYERS
ISSN号	0217-9792
通讯作者	cheng bw,chinese acad sci,inst semicond,beijing 100083,peoples r china.
中文摘要	photoluminescence (pl) of strained sige/si multiple quantum wells (mqw) with flat and undulated sige well layers was studied at different temperature. with elevated temperature from 10k, the no-phonon (np) peak of the sige layers in the flat sample has firstly a blue shift due to the dominant transition converting from bound excitons (be) to free excitons (fe), and then has a red shift when the temperature is higher than 30k because of the narrowing of the band gap. in the undulated sample, however, monotonous blue shift was observed as the temperature was elevated from 10 k to 287 k. the thermally activated electrons, confined in si due to type-ii band alignment, leak into the sige crest regions, and the leakage is enhanced with the elevated temperature. it results in a blue shift of the sige luminescence spectra.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11704]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Cheng BW,Zhang JG,Zuo YH,et al. Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells[J]. international journal of modern physics b,2002,16(28-29):4211-4214.
APA	Cheng BW.,Zhang JG.,Zuo YH.,Mao RW.,Huang CJ.,...&Wang QM.(2002).Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells.international journal of modern physics b,16(28-29),4211-4214.
MLA	Cheng BW,et al."Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells".international journal of modern physics b 16.28-29(2002):4211-4214.