Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si

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	Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si
	Tan LW ; Wang QY ; Wang J ; Yu YH ; Liu ZL ; Lin LY
刊名	journal of crystal growth
	2003
卷号	247 期号:3-4 页码:255-260
关键词	heteroepitaxial growth gamma-Al2O3 silicon silicon on insulator FILMS SI DEPOSITION AL2O3
ISSN号	0022-0248
通讯作者	tan lw,chinese acad sci,inst semicond,novel semicond mat lab,ctr mat sci,beijing 100083,peoples r china.
中文摘要	in this paper, we report the fabrication of si-based double-hetero-epitaxial silicon on insulator (soi) structure si/gamma-al2o3/si. firstly, single crystalline gamma-al2o3(100) insulator films were grown epitaxially on si(100) using the sources of tma (al(ch3)(3)) and o-2 by very low-pressure chemical vapor deposition. afterwards, si(100) epitaxial films were grown on gamma-al2o3 (100)/si(100) epi-substrates using a chemical vapor deposition method similar to the silicon on sapphire epitaxial growth. the si/gamma-al2o3/si sol materials are characterized in detail by reflect high-energy electron diffraction, x-ray diffraction and auger energy spectrum (aes) techniques. the insulator layer of gamma-al2o3 has an excellent dielectric property. the leakage current is less than 1 x 10(-10) a/cm(2) when the electric field is below 1.3 mv/ cm. the si film grown on gamma-al2o3/si epi-substrates was single crystalline. meanwhile, the aes depth profile of the sol structure shows that the composition of gamma-al2o3 film is uniform, and the carbon contamination is not observed. additionally, the gamma-al2o3/si epi-substrates are suitable candidates as a platform for a variety of active layers such as gan, sic and gesi. it shows a bright future for microelectronic and optical electronics applications. (c) 2002 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11678]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Tan LW,Wang QY,Wang J,et al. Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si[J]. journal of crystal growth,2003,247(3-4):255-260.
APA	Tan LW,Wang QY,Wang J,Yu YH,Liu ZL,&Lin LY.(2003).Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si.journal of crystal growth,247(3-4),255-260.
MLA	Tan LW,et al."Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si".journal of crystal growth 247.3-4(2003):255-260.