An MD Study of the Temperature Effect on H Interacting with SiC (100) | |
SUN Weizhong; ZHAO Chengli; ZHANG Junyuan; CHEN Feng; GOU Fujun | |
2012 | |
卷号 | 14期号:12页码:1121-1124 |
关键词 | 相互作用 SiC 温度效应 分子动力学模拟 MD 表面温度 氢原子 仿真结果 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/6480394 |
专题 | 贵州大学 |
作者单位 | 1.[1]Key Laboratory of Radiation Physics and Technology, Ministry of Education 2.Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China 3.[2]Institute of Plasma Surface Interactions, Guizhou University, Guiyang 550025, China 4.[3]FOM Institute for Plasma Physics, 3439 MN Nieuwegein, the Netherlands |
推荐引用方式 GB/T 7714 | SUN Weizhong,ZHAO Chengli,ZHANG Junyuan,等. An MD Study of the Temperature Effect on H Interacting with SiC (100)[J],2012,14(12):1121-1124. |
APA | SUN Weizhong,ZHAO Chengli,ZHANG Junyuan,CHEN Feng,&GOU Fujun.(2012).An MD Study of the Temperature Effect on H Interacting with SiC (100).,14(12),1121-1124. |
MLA | SUN Weizhong,et al."An MD Study of the Temperature Effect on H Interacting with SiC (100)".14.12(2012):1121-1124. |
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