Alloy states in dilute GaAs1-xNx alloys (x < 1%)

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	Alloy states in dilute GaAs1-xNx alloys (x < 1%)
	Luo XD ; Huang JS ; Xu ZY ; Yang CL ; Liu J ; Ge WK ; Zhang Y ; Mascarenhas A ; Xin HP ; Tu CW
刊名	applied physics letters
	2003
卷号	82 期号:11 页码:1697-1699
关键词	BAND-GAP REDUCTION GAASN EXCITONS
ISSN号	0003-6951
通讯作者	luo xd,chinese acad sci,inst semicond,natl lab superlattices microstruct,beijing 100083,peoples r china.
中文摘要	a set of gaas1-xnx samples with small nitrogen composition (x<1%) were investigated by continuous-wave photoluminescence (pl), pulse-wave excitation pl, and time-resolved pl. in the pl spectra, an extra transition located at the higher-energy side of the commonly reported n-related emissions was observed. by measuring the pl dependence on temperature and excitation power, the pl peak was identified as a transition of alloy band edge-related recombination in gaasn. the pl dynamics further confirms its intrinsic nature as being associated with the band edge rather than n-related bound states. (c) 2003 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11642]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Luo XD,Huang JS,Xu ZY,et al. Alloy states in dilute GaAs1-xNx alloys (x < 1%)[J]. applied physics letters,2003,82(11):1697-1699.
APA	Luo XD.,Huang JS.,Xu ZY.,Yang CL.,Liu J.,...&Tu CW.(2003).Alloy states in dilute GaAs1-xNx alloys (x < 1%).applied physics letters,82(11),1697-1699.
MLA	Luo XD,et al."Alloy states in dilute GaAs1-xNx alloys (x < 1%)".applied physics letters 82.11(2003):1697-1699.