Green-light-emitting ZnSe nanowires fabricated via vapor phase growth

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	Green-light-emitting ZnSe nanowires fabricated via vapor phase growth
	Xiang B ; Zhang HZ ; Li GH ; Yang FH ; Su FH ; Wang RM ; Xu J ; Lu GW ; Sun XC ; Zhao Q ; Yu DP
刊名	applied physics letters
	2003
卷号	82 期号:19 页码:3330-3332
关键词	PHYSICAL EVAPORATION QUANTUM WIRES DOTS DEPOSITION
ISSN号	0003-6951
通讯作者	yu dp,peking univ,sch phys,state key lab mesoscop phys,beijing 100871,peoples r china.
中文摘要	stoichiometric znse nanowires have been synthesized through a vapor phase reaction of zinc and selenium powder on the (100) silicon substrate coated with a gold film of 2 nm in thickness. the microstructures and the chemical compositions of the as-grown nanowires have been investigated by means of electron microscopy, the energy dispersive spectroscopy, and raman spectroscopy. the results reveal that the as-grown materials consist of znse nanowires with diameters ranging from 5 to 50 nm. photoluminescence of the sample demonstrates a strong green emission from room temperature down to 10 k. this is attributed to the recombination of electrons from conduction band to the medium deep au acceptors. (c) 2003 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11586]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xiang B,Zhang HZ,Li GH,et al. Green-light-emitting ZnSe nanowires fabricated via vapor phase growth[J]. applied physics letters,2003,82(19):3330-3332.
APA	Xiang B.,Zhang HZ.,Li GH.,Yang FH.,Su FH.,...&Yu DP.(2003).Green-light-emitting ZnSe nanowires fabricated via vapor phase growth.applied physics letters,82(19),3330-3332.
MLA	Xiang B,et al."Green-light-emitting ZnSe nanowires fabricated via vapor phase growth".applied physics letters 82.19(2003):3330-3332.