Photoluminesfcence of Er-doped SiO2 films containing Si nanocrystals and Er

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	Photoluminesfcence of Er-doped SiO2 films containing Si nanocrystals and Er
	Chen CY ; Chen WD ; Song SF ; Hsu CC
刊名	journal of crystal growth
	2003
卷号	253 期号:1-4 页码:10-15
关键词	low dimensional structures chemical vapor deposition processes nanomaterials semiconducting materials SILICON NANOCRYSTALS LUMINESCENCE EXCITATION
ISSN号	0022-0248
通讯作者	chen cy,chinese acad sci,inst semicond,pob 912,beijing 100083,peoples r china.
中文摘要	correlations between si nanocrystal (nc-si) related photoluminescence (pl), er3+ emission and nonradiative defects in the er-doped sio2 films containing nc-si (srso) are studied. upon 514.5 nm laser excitation the erbium-doped srso samples exhibit pl peaks at around 0.8 and 1.54 mum, which can be assigned to the electron-hole recombination in nc-si and the intra-4f transition in er3+, respectively. with increasing er3+ content in the films, er3+ emission becomes intense while the pl at 0.8 mum decreases, suggesting a strong coupling of nc-si and er 31 ions. hydrogen plasma treatment for the samples improve the pl intensities of the 0.8 and 1.54 mum bands, indicating h passivation for the nonradiative defects existing in the samples. further-more, from the effect of hydrogen treatment for the samples, we observe variation of the number of nonradiative defects with annealing temperatures. (c) 2003 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11542]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen CY,Chen WD,Song SF,et al. Photoluminesfcence of Er-doped SiO2 films containing Si nanocrystals and Er[J]. journal of crystal growth,2003,253(1-4):10-15.
APA	Chen CY,Chen WD,Song SF,&Hsu CC.(2003).Photoluminesfcence of Er-doped SiO2 films containing Si nanocrystals and Er.journal of crystal growth,253(1-4),10-15.
MLA	Chen CY,et al."Photoluminesfcence of Er-doped SiO2 films containing Si nanocrystals and Er".journal of crystal growth 253.1-4(2003):10-15.