Study of optical properties in GaAs1-xSbx/GaAs single quantum wells
Luo XD ; Bian LF ; Xu ZY ; Luo HL ; Wang YQ ; Wang JN ; Ge WK
刊名acta physica sinica
2003
卷号52期号:7页码:1761-1765
关键词GaAsSb/GaAs selectively-excited type II transition ROOM-TEMPERATURE GAAS DOTS OPERATION
ISSN号1000-3290
通讯作者luo xd,chinese acad sci,inst semicond,state key lab superlattices & microstruct,beijing 100083,peoples r china.
中文摘要gaassb/gaas single quantum wells (sqws) grown by molecular beam epitaxy are studied by selectively-excited photoluminescence (sepl) measurement. for the first time, we have simultaneously observed the pl, from both type i and type ii transitions in gaassb/gaas heterostructure in the sepl. the two transitions exhibit different pl, behaviours under different excitation energy. as expected, the peak energy of type i emission remains constant in the whole excitation energy range we used, while type u transition shows a significant blue shift with increasing excitation energy. the observed blue shift is well explained in terms of electron-hole charge separation model at the interface. time-resolved(tr) pl exhibits more type 11 characteristic of gaassb/gaas qw. moreover, the results of the excitation-power-dependent pl and trpl provide more direct information on the type-ii nature of the band alignment in gaassb/gaas quantum-well structures. by combining the experimental results with some simple calculations, we have obtained the strained and unstrained valence band offsets of q(v) = 1.145 and q(v)(0) = 0. 76 in our samples, respectively.
学科主题半导体物理
收录类别SCI
语种中文
公开日期2010-08-12
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/11522]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Luo XD,Bian LF,Xu ZY,et al. Study of optical properties in GaAs1-xSbx/GaAs single quantum wells[J]. acta physica sinica,2003,52(7):1761-1765.
APA Luo XD.,Bian LF.,Xu ZY.,Luo HL.,Wang YQ.,...&Ge WK.(2003).Study of optical properties in GaAs1-xSbx/GaAs single quantum wells.acta physica sinica,52(7),1761-1765.
MLA Luo XD,et al."Study of optical properties in GaAs1-xSbx/GaAs single quantum wells".acta physica sinica 52.7(2003):1761-1765.
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace