Time-resolved photoluminescence studies of AlInGaN alloys

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	Time-resolved photoluminescence studies of AlInGaN alloys
	Li DB
刊名	chinese physics letters
	2003
卷号	20 期号:7 页码:1148-1150
关键词	INXALYGA1-X-YN QUATERNARY ALLOYS LUMINESCENCE
ISSN号	0256-307x
通讯作者	dong x,chinese acad sci,inst semicond,key lab semicond mat,beijing 100083,peoples r china.
中文摘要	we study the two samples of aiingan, i.e., 1-mum gan grown at 1030degreesc on the buffer and followed by a 0.6-mum-thick epilayer of aiingan under the low pressure of 76 torr and the aiingan layer deposited directly on the buffer layer without the high-temperature gan layer, by temperature-dependent photoluminescence (pl) spectroscopy and picosecond time-resolved photoluminescence (trpl) spectroscopy. the trpl signals of both the samples were fitted well as a stretched exponential decay at all temperatures, indicating significant disorder in the material. we attribute the disorder to nanoscale quantum dots or discs of high indium concentration. temperature dependence of dispersive exponent beta shows that the stretched exponential decay of the two samples comes from different mechanisms. the different depths of the localization potential account for the difference, which is illustrated by the results of temperature dependence of radiative recombination lifetime and pl peak energy.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11512]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li DB. Time-resolved photoluminescence studies of AlInGaN alloys[J]. chinese physics letters,2003,20(7):1148-1150.
APA	Li DB.(2003).Time-resolved photoluminescence studies of AlInGaN alloys.chinese physics letters,20(7),1148-1150.
MLA	Li DB."Time-resolved photoluminescence studies of AlInGaN alloys".chinese physics letters 20.7(2003):1148-1150.