Microstructure characterization of transition films from amorphous to nanocrocrystalline silicon

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	Microstructure characterization of transition films from amorphous to nanocrocrystalline silicon
	Xu YY ; Liao XB ; Kong GL ; Zeng XB ; Hu ZH ; Diao HW ; Zhang SB
刊名	journal of crystal growth
	2003
卷号	256 期号:1-2 页码:27-32
关键词	nanostructures growth from vapor chemical vapor deposition processes semiconducting silicon A-SI-H MICROCRYSTALLINE SILICON EXCITATION-FREQUENCY HYDROGENATED SILICON DEPOSITION PLASMA TEMPERATURE
ISSN号	0022-0248
通讯作者	xu yy,chinese acad sci,inst semicond,state key lab surface phys,ctr condensed matter phys,beijing 100083,peoples r china.
中文摘要	hydrogenated silicon (si:h) films near the threshold of crystallinity were prepared by very high-frequency plasma-enhanced chemical vapor deposition (vhf-pecvd) using a wide range of hydrogen dilution r-h = [h-2]/[sih4] values of 2-100. the effects of h dilution r-h on the structural properties of the films were investigated using micro-raman scattering and fourier transform infrared (ftir) absorption spectroscopy. the obtained raman spectra show that the h dilution leads to improvements in the short-range order and the medium-range order of the amorphous network and then to the morphological transition from amorphous to crystalline states. the onset of this transition locates between r-h = 30 and 40 in our case, and with further increasing r-h from 40 to 100, the nanocrystalline volume fraction increases from similar to23% to 43%, and correspondingly the crystallite size enlarges from similar to2.8 to 4.4 nm. the ftir spectra exhibit that with r-h increasing, the relative intensities of both the sih stretching mode component at 2100 cm(-1) and wagging mode component at 620 cm(-1) increase in the same manner. we assert that these variations in ir spectra should be associated with the formation of paracrystalline structures in the low h dilution films and nanocrystalline structures in the high h dilution films. (c) 2003 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11498]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu YY,Liao XB,Kong GL,et al. Microstructure characterization of transition films from amorphous to nanocrocrystalline silicon[J]. journal of crystal growth,2003,256(1-2):27-32.
APA	Xu YY.,Liao XB.,Kong GL.,Zeng XB.,Hu ZH.,...&Zhang SB.(2003).Microstructure characterization of transition films from amorphous to nanocrocrystalline silicon.journal of crystal growth,256(1-2),27-32.
MLA	Xu YY,et al."Microstructure characterization of transition films from amorphous to nanocrocrystalline silicon".journal of crystal growth 256.1-2(2003):27-32.