Spin-polarized current produced by a double barrier resonant tunneling diode

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	Spin-polarized current produced by a double barrier resonant tunneling diode
	Xia JB ; Hai GQ ; Wang JN
刊名	solid state communications
	2003
卷号	127 期号:7 页码:489-492
关键词	semiconductor semimagnetic spin tunneling SEMICONDUCTOR HETEROSTRUCTURE INJECTION
ISSN号	0038-1098
通讯作者	hai gq,univ sao paulo,inst fis sao carlos,av trabalhador saocarlense 400,br-13560970 sao carlos,sp,brazil.
中文摘要	the spin-polarized tunneling current through a double barrier resonant tunneling diode (rtd) made with a semimagnetic semiconductor is studied theoretically. the calculated spin-polarized current and polarization degree are in agreement with recent experimental results. it is predicted that the polarization degree can be modulated continuously from + 1 to - 1 by changing the external voltage such that the quasi-confined spin-up and spin-down energy levels shift downwards from the fermi level to the bottom of the conduction band. the rtd with low potential barrier or the tunneling through the second quasi-confined state produces larger spin-polarized current. furthermore a higher magnetic field enhances the polarization degree of the tunneling current. (c) 2003 elsevier ltd. all rights reserved.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11462]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xia JB,Hai GQ,Wang JN. Spin-polarized current produced by a double barrier resonant tunneling diode[J]. solid state communications,2003,127(7):489-492.
APA	Xia JB,Hai GQ,&Wang JN.(2003).Spin-polarized current produced by a double barrier resonant tunneling diode.solid state communications,127(7),489-492.
MLA	Xia JB,et al."Spin-polarized current produced by a double barrier resonant tunneling diode".solid state communications 127.7(2003):489-492.