Structual and optoelectronic properties of polycrystalline silicon thin films prepared by hot-wire chemical vapor deposition at low temperatures

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	Structual and optoelectronic properties of polycrystalline silicon thin films prepared by hot-wire chemical vapor deposition at low temperatures
	Wang LJ ; Zhu MF ; Liu FZ ; Liu JL ; Han YQ
刊名	acta physica sinica
	2003
卷号	52 期号:11 页码:2934-2938
关键词	polycrystalline silicon hot-wire CVD optoelectronic properties AMORPHOUS-SILICON
ISSN号	1000-3290
通讯作者	wang lj,chinese acad sci,dept phys,grad sch,beijing 100039,peoples r china.
中文摘要	polycrystalline silicon thin films were prepared by hot-wire chemical vapor deposition ( hwcvd) on glass at 250 degreesc with w or ta wire as the catalyzers. the structual and optoelectronic properties as functions of the filament temperature, deposition pressure and the filament-substrate distance were studied, and the optimized polycrystalline silicon thin films were obtained with x-c > 90 % ( x-c denotes the crystalline ratio of the film), crystal grain size about 30-40nm, r-d approximate to 0.8nm/s, sigma(d) about 10(-7) - 10(-6) omega(-1) cm(-1), ea(a) approximate to 0.5ev and e-opt less than or equal to 1.3ev.
学科主题	半导体物理
收录类别	SCI
语种	中文
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11394]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang LJ,Zhu MF,Liu FZ,et al. Structual and optoelectronic properties of polycrystalline silicon thin films prepared by hot-wire chemical vapor deposition at low temperatures[J]. acta physica sinica,2003,52(11):2934-2938.
APA	Wang LJ,Zhu MF,Liu FZ,Liu JL,&Han YQ.(2003).Structual and optoelectronic properties of polycrystalline silicon thin films prepared by hot-wire chemical vapor deposition at low temperatures.acta physica sinica,52(11),2934-2938.
MLA	Wang LJ,et al."Structual and optoelectronic properties of polycrystalline silicon thin films prepared by hot-wire chemical vapor deposition at low temperatures".acta physica sinica 52.11(2003):2934-2938.