Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on Si(001)

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	Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on Si(001)
	Yin ZG
刊名	solid state communications
	2006
卷号	137 期号:3 页码:126-128
关键词	magnetron sputtering MnxGe1-x ferromagnetism N-TYPE GE FERROMAGNETISM SEMICONDUCTOR SPINTRONICS
ISSN号	0038-1098
通讯作者	liu, lf, peking univ, inst microelect, novel devices grp, beijing 100871, peoples r china. e-mail: lfliu@ime.pku.edu.cn
中文摘要	we have grown mnxge1-x films (x=0, 0.06, 0.1) on si (001) substrates by magnetron cosputtering, and have explored the resulting structural, morphological, electrical and magnetic properties. x-ray diffraction results show there is no secondary phase except ge in the mn0.06ge0.94 film while new phase appears in the mn0.1ge0.9 film. nanocrystals are formed in the mn0.06ge0.94 film, determined by field-emission scanning electron microscopy. hall measurement indicates that the mn0.06ge0.94 film is p-type semiconductor and hole carrier concentration is 6.07 x 10(19) cm(-3) while the mnxge1-x films with x=0 has n-type carriers. the field dependence of magnetization was measured using alternating gradient magnetometer, and it has been indicated that the mn0.06ge0.94 film is ferromagnetic at room temperature. (c) 2005 elsevier ltd. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10886]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yin ZG. Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on Si(001)[J]. solid state communications,2006,137(3):126-128.
APA	Yin ZG.(2006).Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on Si(001).solid state communications,137(3),126-128.
MLA	Yin ZG."Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on Si(001)".solid state communications 137.3(2006):126-128.