Dependence of intrinsic defects in ZnO films on oxygen fraction studied by positron annihilation

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Dependence of intrinsic defects in ZnO films on oxygen fraction studied by positron annihilation
	Peng CX ; Weng HM ; Yang XJ ; Ye BJ ; Cheng B ; Zhou XY ; Han RD
刊名	chinese physics letters
	2006
卷号	23 期号:2 页码:489-492
关键词	P-TYPE ZNO THIN-FILMS ROOM-TEMPERATURE PHOTOLUMINESCENCE DEPOSITION SUBSTRATE VACANCIES LAYER BEAM GAN
ISSN号	0256-307x
通讯作者	peng, cx, univ sci & technol china, dept modern phys, hefei 230026, peoples r china. e-mail: pengcx@mail.ustc.edu.cn
中文摘要	defects in zno films grown by radio-frequency reactive magnetron sputtering under variable ratios between oxygen and argon gas have been investigated by using the monoenergetic positron beam technique. the dominate intrinsic defects in these zno samples are o vacancies (v-o) and zn interstitials (zn-i) when the oxygen fraction in the o-2/ar feed gas does not exceed 70% in the processing chamber. on the other hand, zinc vacancies are preponderant in the zno elms fabricated in richer oxygen environment. the concentration of zinc vacancies increases with the increasing (2) fraction. for the oxygen fraction 85%, the number of zinc vacancies that could trap positrons will be smaller. it is speculated that some unknown defects could shield zinc vacancies. the concentration of zinc vacancies in the zno films varies with the oxygen fraction in the growth chamber, which is in agreement with the results of photoluminescence spectra.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10856]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Peng CX,Weng HM,Yang XJ,et al. Dependence of intrinsic defects in ZnO films on oxygen fraction studied by positron annihilation[J]. chinese physics letters,2006,23(2):489-492.
APA	Peng CX.,Weng HM.,Yang XJ.,Ye BJ.,Cheng B.,...&Han RD.(2006).Dependence of intrinsic defects in ZnO films on oxygen fraction studied by positron annihilation.chinese physics letters,23(2),489-492.
MLA	Peng CX,et al."Dependence of intrinsic defects in ZnO films on oxygen fraction studied by positron annihilation".chinese physics letters 23.2(2006):489-492.