New type of Fano resonant tunneling via Anderson impurities in superlattice

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	New type of Fano resonant tunneling via Anderson impurities in superlattice
	Liu J
刊名	europhysics letters
	2006
卷号	74 期号:5 页码:875-881
关键词	ELECTRIC-FIELD SEMICONDUCTOR SUPERLATTICES LOCALIZATION
ISSN号	0295-5075
通讯作者	xu, sj, univ hong kong, dept phys, pokfulam rd, hong kong, hong kong, peoples r china. e-mail: sjxu@hkucc.hku.hk
中文摘要	the spectrum of differential tunneling conductance in si-doped gaas/alas superlattice is measured at low electric fields. the conductance spectra feature a zero-bias peak and a low-bias dip at low temperatures. by taking into account the quantum interference between tunneling paths via superlattice miniband and via coulomb blockade levels of impurities, we theoretically show that such a peak-dip structure is attributed to a fano resonance where the peak always appears at the zero bias and the line shape is essentially described by a new function \xi\/\xi\+1 with the asymmetry parameter q approximate to 0. as the temperature increases, the peak-dip structure fades out due to thermal fluctuations. good agreement between experiment and theory enables us to distinguish the zero-bias resonance from the usual kondo resonance.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10640]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu J. New type of Fano resonant tunneling via Anderson impurities in superlattice[J]. europhysics letters,2006,74(5):875-881.
APA	Liu J.(2006).New type of Fano resonant tunneling via Anderson impurities in superlattice.europhysics letters,74(5),875-881.
MLA	Liu J."New type of Fano resonant tunneling via Anderson impurities in superlattice".europhysics letters 74.5(2006):875-881.