High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure MOCVD

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	High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure MOCVD
	Pan JQ
刊名	acta physica sinica
	2006
卷号	55 期号:6 页码:2982-2985
关键词	ultra-low-pressure selective area growth tapered mask BANDGAP ENERGY CONTROL INTEGRATED DFB LASER EPITAXY
ISSN号	1000-3290
通讯作者	zhao, q, chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china. e-mail: qzhao@red.semi.ac.cn
中文摘要	high quality ingaasp/ingaasp multiple quantum wells ( mqws) have been selectively grown by ultra-low-pressure (22 mbar) metal-organic chemical vapor deposition. a large bandgap energy shift of 46 nm and photoluminescence with fwhm less than 30 mev were obtained with a rather small mask width variation (15-30 mu m). in order to study the uniformity of the mqws grown in the selective area, novel tapered masks were employed, and the transition effect w the tapered region was also studied. the energy detuning of the tapered region was observed to be saturated at larger ratios of the mask width to the tapered region length.
学科主题	光电子学
收录类别	SCI
语种	中文
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10630]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Pan JQ. High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure MOCVD[J]. acta physica sinica,2006,55(6):2982-2985.
APA	Pan JQ.(2006).High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure MOCVD.acta physica sinica,55(6),2982-2985.
MLA	Pan JQ."High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure MOCVD".acta physica sinica 55.6(2006):2982-2985.