Biaxial stress dependence of the electrostimulated near-band-gap spectrum of GaN epitaxial film grown on (0001) sapphire substrate

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	Biaxial stress dependence of the electrostimulated near-band-gap spectrum of GaN epitaxial film grown on (0001) sapphire substrate
	Wan KS (Wan Keshu) ; Porporati AA (Porporati Alessandro Alan) ; Feng G (Feng Gan) ; Yang H (Yang Hui) ; Pezzotti G (Pezzotti Giuseppe)
刊名	applied physics letters
	2006
卷号	88 期号:25 页码:art.no.251910
关键词	NITRIDE
ISSN号	0003-6951
通讯作者	wan, ks, kyoto inst technol, ceram phys lab, sakyo ku, kyoto 6068585, japan. e-mail: pezzotti@chem.kit.ac.jp
中文摘要	the biaxial piezospectroscopic coefficient (i.e., the rate of spectral shift with stress) of the electrostimulated near-band-gap luminescence of gallium nitride (gan) was determined as pi=-25.8 +/- 0.2 mev/gpa. a controlled biaxial stress field was applied on a hexagonal gan film, epitaxially grown on (0001) sapphire using a ball-on-ring biaxial bending jig, and the spectral shift of the electrostimulated near-band-gap was measured in situ in the scanning electron microscope. this calibration method can be useful to overcome the lack of a bulk crystal of relatively large size for more conventional uniaxial bending calibrations, which has so far hampered the precise determination of the piezospectroscopic coefficient of gan. the main source of error involved with the present calibration method is represented by the selection of appropriate values for the elastic stiffness constants of both film and substrate. the ball-on-ring calibration method can be generally applied to directly determine the biaxial-stress dependence of selected cathodoluminescence bands of epilayer/substrate materials without requiring separation of the film from the substrate. (c) 2006 american institute of physics.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10588]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wan KS ,Porporati AA ,Feng G ,et al. Biaxial stress dependence of the electrostimulated near-band-gap spectrum of GaN epitaxial film grown on (0001) sapphire substrate[J]. applied physics letters,2006,88(25):art.no.251910.
APA	Wan KS ,Porporati AA ,Feng G ,Yang H ,&Pezzotti G .(2006).Biaxial stress dependence of the electrostimulated near-band-gap spectrum of GaN epitaxial film grown on (0001) sapphire substrate.applied physics letters,88(25),art.no.251910.
MLA	Wan KS ,et al."Biaxial stress dependence of the electrostimulated near-band-gap spectrum of GaN epitaxial film grown on (0001) sapphire substrate".applied physics letters 88.25(2006):art.no.251910.