Porous InP array-directed assembly of InAs nanostructure

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	Porous InP array-directed assembly of InAs nanostructure
	Li L
刊名	applied physics letters
	2006
卷号	88 期号:26 页码:art.no.263107
关键词	BEAM EPITAXIAL-GROWTH QUANTUM DOTS RADIATIVE RECOMBINATION PATTERNED GAAS SURFACE STATES GE
ISSN号	0003-6951
通讯作者	liu, fq, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: fqliu@red.semi.ac.cn
中文摘要	fascinating features of porous inp array-directed assembly of inas nanostructures are presented. strained inas nanostructures are grown by molecular-beam epitaxy on electrochemical etched porous inp substrate. identical porous substrate with different pore depths defines different growth modes. shallow pores direct the formation of closely spaced inas dots at the bottom. deep pores lead to progressive covering of the internal surface of pores by epitaxial material followed by pore mouth shrinking. for any depth an obvious dot depletion feature occurs on top of the pore framework. this growth method presages a pathway to engineer quantum-dot molecules and other nanoelements for fancy physical phenomena. (c) 2006 american institute of physics.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10572]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li L. Porous InP array-directed assembly of InAs nanostructure[J]. applied physics letters,2006,88(26):art.no.263107.
APA	Li L.(2006).Porous InP array-directed assembly of InAs nanostructure.applied physics letters,88(26),art.no.263107.
MLA	Li L."Porous InP array-directed assembly of InAs nanostructure".applied physics letters 88.26(2006):art.no.263107.