Effects of ZnO interlayers on thick GaN/Si film prepared by RF magnetron sputtering

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	Effects of ZnO interlayers on thick GaN/Si film prepared by RF magnetron sputtering
	Zhang CG ; Blan LF ; Chen WD ; Hsu CC
刊名	journal of crystal growth
	2006
卷号	293 期号:2 页码:258-262
关键词	radio-frequency magnetron sputtering
ISSN号	0022-0248
通讯作者	zhang, cg, chinese acad sci, inst semicond, state key lab surface phys, pob 912, beijing 100083, peoples r china. e-mail: zhangcg@semi.ac.cn
中文摘要	we have successfully prepared a high-quality 2 mu m-thick gan film with three inserted 30 nm-thick zno interlayers on si (111) substrate without cracks by magnetron sputtering. the effects of the thickness and number of zno interlayers on the crystal quality of the gan films were studied. it was found that the gan crystal quality initially improved with the increase of the thickness of zno interlayers, but deteriorated quickly when the thickness exceeded 30 nm. multiple zno interlayers were used as an effective means to further improve the crystal quality of the gan film. by increasing the number of interlayers up to three, the cracks can be constrained to a certain extent, and the crystal quality of the gan film greatly improved. (c) 2006 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10450]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang CG,Blan LF,Chen WD,et al. Effects of ZnO interlayers on thick GaN/Si film prepared by RF magnetron sputtering[J]. journal of crystal growth,2006,293(2):258-262.
APA	Zhang CG,Blan LF,Chen WD,&Hsu CC.(2006).Effects of ZnO interlayers on thick GaN/Si film prepared by RF magnetron sputtering.journal of crystal growth,293(2),258-262.
MLA	Zhang CG,et al."Effects of ZnO interlayers on thick GaN/Si film prepared by RF magnetron sputtering".journal of crystal growth 293.2(2006):258-262.