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	Synthesis of GaN nanowires by ammoniating sputtered Ga2O3/Ti films on Si substrates
	Sun, Li-Li[1]; Xue, Cheng-Shan[1]; Ai, Yu-Jie[1]; Sun, Chuan-Wei[2]; Zhuang, Hui-Zhao[1]; Zhang, Xiao-Kai[1]; Wang, Fu-Xue[1]; Chen, Jin-Hua[1]; Li, Hong[1]
	2007
卷号	38期号:2页码:259-260+264
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6436719
专题	山东师范大学
作者单位	1.[1] Semiconductor Research Institute, Shandong Normal University, Ji'nan 250014, China 2.[2] School of Information Science and Engineering, Ji'nan University, Ji'nan 250022, China
推荐引用方式 GB/T 7714	Sun, Li-Li[1],Xue, Cheng-Shan[1],Ai, Yu-Jie[1],et al. Synthesis of GaN nanowires by ammoniating sputtered Ga2O3/Ti films on Si substrates[J],2007,38(2):259-260+264.
APA	Sun, Li-Li[1].,Xue, Cheng-Shan[1].,Ai, Yu-Jie[1].,Sun, Chuan-Wei[2].,Zhuang, Hui-Zhao[1].,...&Li, Hong[1].(2007).Synthesis of GaN nanowires by ammoniating sputtered Ga2O3/Ti films on Si substrates.,38(2),259-260+264.
MLA	Sun, Li-Li[1],et al."Synthesis of GaN nanowires by ammoniating sputtered Ga2O3/Ti films on Si substrates".38.2(2007):259-260+264.

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