Semiconductor-metal transition in InSb nanowires and nanofilms under external electric field

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	Semiconductor-metal transition in InSb nanowires and nanofilms under external electric field
	Zhang XW (Zhang X. W.) ; Li SS (Li S. S.) ; Xia JB (Xia J. B.)
刊名	applied physics letters
	2006
卷号	89 期号:17 页码:art.no.172113
关键词	CONDUCTING NANOWIRES TRANSISTOR
ISSN号	0003-6951
通讯作者	zhang, xw, china ctr adv sci & technol, world lab, pob 8730, beijing 100080, peoples r china. e-mail: zhxw99@semi.ac.cn
中文摘要	the electronic structures, rashba spin-orbit couplings, and transport properties of insb nanowires and nanofilms are investigated theoretically. when both the radius of the wire (or the thickness of the film) and the electric field are large, the electron bands and hole bands overlap, and the fermi level crosses with some bands, which means that the semiconductors transit into metals. meanwhile, the rashba coefficients behave in an abnormal way. the conductivities increase dramatically when the electric field is larger than a critical value. this semiconductor-metal transition is observable at the room temperature. (c) 2006 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10334]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang XW ,Li SS ,Xia JB . Semiconductor-metal transition in InSb nanowires and nanofilms under external electric field[J]. applied physics letters,2006,89(17):art.no.172113.
APA	Zhang XW ,Li SS ,&Xia JB .(2006).Semiconductor-metal transition in InSb nanowires and nanofilms under external electric field.applied physics letters,89(17),art.no.172113.
MLA	Zhang XW ,et al."Semiconductor-metal transition in InSb nanowires and nanofilms under external electric field".applied physics letters 89.17(2006):art.no.172113.