p-type Zn1-xMgxO films with Sb doping by radio-frequency magnetron sputtering

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	p-type Zn1-xMgxO films with Sb doping by radio-frequency magnetron sputtering
	Wang P (Wang Peng) ; Chen NF (Chen Nuofu) ; Yin ZG (Yin Zhigang) ; Dai RX (Dai Ruixuan) ; Bai YM (Bai Yiming)
刊名	applied physics letters
	2006
卷号	89 期号:20 页码:art.no.202102
关键词	ZNO THIN-FILMS MGXZN1-XO DEVICES ALLOY
ISSN号	0003-6951
通讯作者	wang, p, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: pwang@semi.ac.cn
中文摘要	sb-doped zn1-xmgxo films were grown on c-plane sapphire substrates by radio-frequency magnetron sputtering. the p-type conduction of the films (0.05 <= x <= 0.13) was confirmed by hall measurements, revealing a hole concentration of 10(15)-10(16) cm(-3) and a mobility of 0.6-4.5 cm(2)/v s. a p-n homojunction comprising an undoped zno layer and an sb-doped zn0.95mg0.05o layer shows a typical rectifying characteristic. sb-doped p-type zn1-xmgxo films also exhibit a changeable wider band gap as a function of x, implying that they can probably be used for fabrication of zno-based quantum wells and ultraviolet optoelectronic devices. (c) 2006 american institute of physics.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10308]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang P ,Chen NF ,Yin ZG ,et al. p-type Zn1-xMgxO films with Sb doping by radio-frequency magnetron sputtering[J]. applied physics letters,2006,89(20):art.no.202102.
APA	Wang P ,Chen NF ,Yin ZG ,Dai RX ,&Bai YM .(2006).p-type Zn1-xMgxO films with Sb doping by radio-frequency magnetron sputtering.applied physics letters,89(20),art.no.202102.
MLA	Wang P ,et al."p-type Zn1-xMgxO films with Sb doping by radio-frequency magnetron sputtering".applied physics letters 89.20(2006):art.no.202102.