The effects of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayers

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	The effects of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayers
	Wang XL (Wang X. L.) ; Zhao DG (Zhao D. G.) ; Li XY (Li X. Y.) ; Gong HM (Gong H. M.) ; Yang H (Yang H.) ; Liang JW (Liang J. W.)
刊名	materials letters
	2006
卷号	60 期号:29-30 页码:3693-3696
关键词	AlGaN LT AlN TAXRD dislocation
ISSN号	0167-577x
通讯作者	wang, xl, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. e-mail: wxl@mail.semi.ac.cn
中文摘要	to fabricate nitride-based ultraviolet optoelectronic devices, a deposition process for high-al-composition algan (al content > 50%) films with reduced dislocation densities must be developed. this paper describes the growth of high-al-composition algan film on (0001) sapphire via a lt ain nucleation layer by low pressure metalorganic chemical vapor deposition (lpmocvd). the influence of the low temperature ain buffer layer thickness on the high-al-content algan epilayer is investigated by triple-axis x-ray diffraction (taxrd), scanning electron microscopy (sem), and optical transmittance. the results show that the buffer thickness is a key parameter that affects the quality of the algan epilayer. an appropriate thickness results in the best structural properties and surface morphology. (c) 2006 elsevier b.v. all rights reserved.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10248]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang XL ,Zhao DG ,Li XY ,et al. The effects of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayers[J]. materials letters,2006,60(29-30):3693-3696.
APA	Wang XL ,Zhao DG ,Li XY ,Gong HM ,Yang H ,&Liang JW .(2006).The effects of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayers.materials letters,60(29-30),3693-3696.
MLA	Wang XL ,et al."The effects of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayers".materials letters 60.29-30(2006):3693-3696.